RQ3E150GN MOSFET

RQ3E150GN RQ3E150GN

RQ3E150GN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ3E150GN
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: E150GN
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 15 A
  • Drain-Source Capacitance: 250 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5.8 nS
  • Maximum Drain-Source On-State Resistance: 0.0061 Ohm
  • Total Gate Charge: 15.3 nC
  • Maximum Power Dissipation: 2 W
  • Package: HSMT8