RQ3G100GN MOSFET

RQ3G100GN RQ3G100GN
TransistorData.com is not an official representative or the creator of the MOSFET RQ3G100GN Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official RQ3G100GN transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

RQ3G100GN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ3G100GN
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: G100GN
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 100 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.2 nS
  • Maximum Drain-Source On-State Resistance: 0.0143 Ohm
  • Total Gate Charge: 8.4 nC
  • Maximum Power Dissipation: 2 W
  • Package: HSMT8

Top RQ3G100GN Equivalent Transistors