RQ3L050GN MOSFET

RQ3L050GN RQ3L050GN
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RQ3L050GN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ3L050GN
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: L050GN
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 52 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.9 nS
  • Maximum Drain-Source On-State Resistance: 0.061 Ohm
  • Total Gate Charge: 5.3 nC
  • Maximum Power Dissipation: 2 W
  • Package: HSMT8

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