RQ5H020SP MOSFET

RQ5H020SP RQ5H020SP
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RQ5H020SP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ5H020SP
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: FB
  • Maximum Drain-Source Voltage: 45 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 80 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.19 Ohm
  • Total Gate Charge: 4.5 nC
  • Maximum Power Dissipation: 0.54 W
  • Package: TSMT3

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