RQ6C050UN MOSFET

RQ6C050UN RQ6C050UN
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RQ6C050UN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ6C050UN
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: XG
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 0.03 Ohm
  • Total Gate Charge: 12 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT6

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