RQ6E050AT MOSFET

RQ6E050AT RQ6E050AT
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RQ6E050AT MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ6E050AT
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: VB
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 170 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 16 nS
  • Maximum Drain-Source On-State Resistance: 0.027 Ohm
  • Total Gate Charge: 20.8 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT6

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