RQ6E055BN MOSFET

RQ6E055BN RQ6E055BN
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RQ6E055BN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ6E055BN
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: HH
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 5.5 A
  • Drain-Source Capacitance: 58 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 12 nS
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Total Gate Charge: 8.6 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT6

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