RS1E200AH MOSFET

RS1E200AH RS1E200AH

RS1E200AH MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1E200AH
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 20 A
  • Drain-Source Capacitance: 290 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.9 nS
  • Maximum Drain-Source On-State Resistance: 0.0052 Ohm
  • Total Gate Charge: 55 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8