RS1E200BN MOSFET

RS1E200BN RS1E200BN
TransistorData.com is not an official representative or the creator of the MOSFET RS1E200BN Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official RS1E200BN transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

RS1E200BN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1E200BN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 20 A
  • Drain-Source Capacitance: 360 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 65 nS
  • Maximum Drain-Source On-State Resistance: 0.0039 Ohm
  • Total Gate Charge: 59 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8

Top RS1E200BN Equivalent Transistors