RS1E300GN MOSFET

RS1E300GN RS1E300GN
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RS1E300GN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1E300GN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 30 A
  • Drain-Source Capacitance: 630 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 14.8 nS
  • Maximum Drain-Source On-State Resistance: 0.0022 Ohm
  • Total Gate Charge: 39.8 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8

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