RS1E350BN MOSFET

RS1E350BN RS1E350BN

RS1E350BN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1E350BN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 35 A
  • Drain-Source Capacitance: 940 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 215 nS
  • Maximum Drain-Source On-State Resistance: 0.0017 Ohm
  • Total Gate Charge: 185 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8