RS1G120MN MOSFET

RS1G120MN RS1G120MN

RS1G120MN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1G120MN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 134 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.3 nS
  • Maximum Drain-Source On-State Resistance: 0.0162 Ohm
  • Total Gate Charge: 9.4 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8