RS1G180MN MOSFET

RS1G180MN RS1G180MN
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RS1G180MN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RS1G180MN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 18 A
  • Drain-Source Capacitance: 307 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8.9 nS
  • Maximum Drain-Source On-State Resistance: 0.007 Ohm
  • Total Gate Charge: 19.5 nC
  • Maximum Power Dissipation: 3 W
  • Package: HSOP8

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