RSD050N10 MOSFET

RSD050N10 RSD050N10

RSD050N10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSD050N10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 50 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 15 nS
  • Maximum Drain-Source On-State Resistance: 0.135 Ohm
  • Maximum Power Dissipation: 15 W
  • Package: CPT3_SC63_SOT428