RSD050N10FRA MOSFET

RSD050N10FRA RSD050N10FRA
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RSD050N10FRA MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSD050N10FRA
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 50 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 15 nS
  • Maximum Drain-Source On-State Resistance: 0.19 Ohm
  • Total Gate Charge: 14 nC
  • Maximum Power Dissipation: 15 W
  • Package: SC-63

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