RSD080N06 MOSFET

RSD080N06 RSD080N06

RSD080N06 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSD080N06
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 8 A
  • Drain-Source Capacitance: 90 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 13 nS
  • Maximum Drain-Source On-State Resistance: 0.057 Ohm
  • Maximum Power Dissipation: 15 W
  • Package: CPT3_SC63_SOT428