RSD100N10FRA MOSFET

RSD100N10FRA RSD100N10FRA

RSD100N10FRA MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSD100N10FRA
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 65 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 17 nS
  • Maximum Drain-Source On-State Resistance: 0.133 Ohm
  • Total Gate Charge: 18 nC
  • Maximum Power Dissipation: 20 W
  • Package: SC-63