RSD200N10TL MOSFET

RSD200N10TL RSD200N10TL
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RSD200N10TL MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSD200N10TL
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 20 A
  • Drain-Source Capacitance: 180 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 61 nS
  • Maximum Drain-Source On-State Resistance: 0.052 Ohm
  • Total Gate Charge: 48.5 nC
  • Maximum Power Dissipation: 20 W
  • Package: CPT3

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