RSJ10HN06 MOSFET

RSJ10HN06 RSJ10HN06

RSJ10HN06 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSJ10HN06
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 100 A
  • Drain-Source Capacitance: 2000 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 470 nS
  • Maximum Drain-Source On-State Resistance: 0.003 Ohm
  • Maximum Power Dissipation: 100 W
  • Package: LPTS