RSJ550N10 MOSFET

RSJ550N10 RSJ550N10

RSJ550N10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSJ550N10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 55 A
  • Drain-Source Capacitance: 460 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 105 nS
  • Maximum Drain-Source On-State Resistance: 0.012 Ohm
  • Total Gate Charge: 143 nC
  • Maximum Power Dissipation: 100 W
  • Package: LPTS