RSQ020N03 MOSFET

RSQ020N03 RSQ020N03

RSQ020N03 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RSQ020N03
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 40 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9 nS
  • Maximum Drain-Source On-State Resistance: 0.096 Ohm
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT6