SPB11N60C3 MOSFET

SPB11N60C3 SPB11N60C3
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SPB11N60C3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: SPB11N60C3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 11 A
  • Maximum Drain-Source On-State Resistance: 0.38 Ohm
  • Total Gate Charge: 45 nC
  • Maximum Power Dissipation: 125 W
  • Package: D2PAK_TO263

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