STP100N10F7 MOSFET

STP100N10F7 STP100N10F7

STP100N10F7 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP100N10F7
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4.5 V
  • Maximum Drain Current: 80 A
  • Drain-Source Capacitance: 823 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 40 nS
  • Maximum Drain-Source On-State Resistance: 0.008 Ohm
  • Total Gate Charge: 61 nC
  • Maximum Power Dissipation: 150 W
  • Package: TO-220