STP10N60M2 MOSFET

STP10N60M2 STP10N60M2

STP10N60M2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP10N60M2
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 10N60M2
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 7.5 A
  • Drain-Source Capacitance: 22 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8 nS
  • Maximum Drain-Source On-State Resistance: 0.6 Ohm
  • Total Gate Charge: 13.5 nC
  • Maximum Power Dissipation: 85 W
  • Package: TO-220