STP10NM50N MOSFET

STP10NM50N STP10NM50N

STP10NM50N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP10NM50N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.63 Ohm
  • Total Gate Charge: 17 nC
  • Maximum Power Dissipation: 70 W
  • Package: TO220