STP10NM60ND MOSFET

STP10NM60ND STP10NM60ND

STP10NM60ND MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP10NM60ND
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.6 Ohm
  • Total Gate Charge: 20 nC
  • Maximum Power Dissipation: 70 W
  • Package: TO220