STP10NM65N MOSFET

STP10NM65N STP10NM65N

STP10NM65N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP10NM65N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 9 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.48 Ohm
  • Total Gate Charge: 25 nC
  • Maximum Power Dissipation: 90 W
  • Package: TO220