STP165N10F4 MOSFET

STP165N10F4 STP165N10F4

STP165N10F4 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP165N10F4
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 120 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.0055 Ohm
  • Total Gate Charge: 192 nC
  • Maximum Power Dissipation: 315 W
  • Package: TO220