STP18NM60N MOSFET

STP18NM60N STP18NM60N

STP18NM60N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP18NM60N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 13 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.285 Ohm
  • Total Gate Charge: 35 nC
  • Maximum Power Dissipation: 110 W
  • Package: TO220