STP200N4F3 MOSFET

STP200N4F3 STP200N4F3

STP200N4F3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STP200N4F3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 120 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0044 Ohm
  • Total Gate Charge: 75 nC
  • Maximum Power Dissipation: 300 W
  • Package: TO220