STQ2HNK60ZR-AP MOSFET

STQ2HNK60ZR-AP STQ2HNK60ZR-AP

STQ2HNK60ZR-AP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STQ2HNK60ZR-AP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4.5 V
  • Maximum Drain Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 4.8 Ohm
  • Maximum Power Dissipation: 3 W
  • Package: TO92