STW11NB80 MOSFET

STW11NB80 STW11NB80

STW11NB80 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STW11NB80
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 800 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 11 A
  • Drain-Source Capacitance: 350 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 13 nS
  • Maximum Drain-Source On-State Resistance: 0.8 Ohm
  • Total Gate Charge: 70 nC
  • Maximum Power Dissipation: 190 W
  • Package: TO-247