STY80NM60N MOSFET

STY80NM60N STY80NM60N

STY80NM60N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: STY80NM60N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 74 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.035 Ohm
  • Total Gate Charge: 360 nC
  • Maximum Power Dissipation: 560 W
  • Package: MaX247